MRF19060LR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF19060LR3, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF19060 Rev.

9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.

Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications.

www.datasheet4u.com Typical CDMA Performance: 1960 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 7.5 Watts Power

MRF19060LR3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signa