MRF19060LR3 - RF Power Field Effect Transistors

Freescale Semiconductor

Datasheet Details

Part number	MRF19060LR3
Manufacturer	Freescale Semiconductor
File Size	447.95 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF19060LR3_FreescaleSemiconductor.pdf

Internally Matched for Ease of Use.
High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56.

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Published: Jun 10, 2009 |