MRF19090R3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF19090R3, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF19090 Rev.

6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.

Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications.

www.datasheet4u.com Typical CDMA Performance: 1990 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 9 Watt

MRF19090R3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signa