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MRF19060R3 - RF POWER FIELD EFFECT TRANSISTORS

Download the MRF19060R3 datasheet PDF. This datasheet also covers the MRF19060 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF19060_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF19060 RF POWER FIELD EFFECT TRANSISTORS
MRF19060SR3 RF POWER FIELD EFFECT TRANSISTORS
MRF19030LR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF19030LSR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF19030R3 RF POWER FIELD EFFECT TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19060/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier www.datasheet4u.com applications. • Typical CDMA Performance: 1960 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 7.5 Watts Power Gain — 12.5 dB Adjacent Channel Power — 885 kHz: –47 dBc @ 30 kHz BW 1.25 MHz: –55 dBc @ 12.5 kHz BW 2.
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