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MRF19030R3 - RF POWER FIELD EFFECT TRANSISTORS

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r e quencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and www.datasheet4u.com multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — –47 dBc @ 30 kHz BW 1.25 MHz — –55 dBc @ 12.5 kHz BW 2.25 MHz — –55 dBc @ 1 MHz BW Output Power — 4.5 Watts Avg. Power Gain — 13.