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MRF6V2300NB, MRF6V2300N - RF Power Field Effect Transistor

Motorola Semiconductor

The MRF6V2300NB by Motorola Semiconductor is a RF Power Field Effect Transistor. Below is the official datasheet preview.

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MRF6V2300NB RF Power Field Effect Transistor by Motorola Semiconductor - Datasheet Preview — Official preview page of the MRF6V2300NB RF Power Field Effect Transistor datasheet (Motorola Semiconductor).

Datasheet Details

Part number	MRF6V2300NB, MRF6V2300N
Manufacturer	Motorola Semiconductor
File Size	350.20 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF6V2300N_MotorolaSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF6V2300NB, MRF6V2300N. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF6V2300NB datasheet.

MRF6V2300NB Product details

Features

Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Excellent Thermal Stability.
Facilitates Manual Gain Control, ALC and Modulation Techniques.
225°C Capable Plastic Package.
RoHS Compliant MRF6V2300N MRF6V2300NB.

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Published: Nov 14, 2006 |