Datasheet4U Logo Datasheet4U.com

MRF6V3090NBR5 - RF Power Field Effect Transistors

Download the MRF6V3090NBR5 datasheet PDF. This datasheet also covers the MRF6V3090NR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

22 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 43 pF Chip Capacitors 6.2 pF Chip Capacitor 2.2 pF Chip Capacitor 9.1 pF Chip Capacitor 220 μF, 100 V Electrolytic Capacitors 7.5 pF Chip Capacitors 3.0 pF Chip Capacitor 0.7 pF Chip Capacitor 10 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resi

Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Input Matched for Ease of Use.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Excellent Thermal Stability.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. R5 Suffix =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6V3090NR1_MotorolaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MRF6V3090NBR5
Manufacturer Motorola Semiconductor
File Size 963.01 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF6V3090NBR5 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6V10250HSR3 RF Power Field Effect Transistor Freescale Semiconductor
MRF6V12500GS RF Power LDMOS Transistors NXP
MRF6V12500H RF Power LDMOS Transistors NXP
MRF6V12500HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF6V12500HS RF Power LDMOS Transistors NXP

Other Datasheets by Motorola Semiconductor

Part Number Description
MRF6V3090NBR1 RF Power Field Effect Transistors
MRF6V3090NR1 RF Power Field Effect Transistors
MRF6V3090NR5 RF Power Field Effect Transistors
MRF6V2150N RF Power Field Effect Transistor
MRF6V2150NB RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 22.0 dB Drain Efficiency — 28.5% ACPR @ 4 MHz Offset — --62.