MRF6V2300N Datasheet (Motorola Semiconductor) - RF Power Field Effect Transistor

MRF6V2300N, RF Power Field Effect Transistor

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev.

4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz.

Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 30

MRF6V2300N Features

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Class C Operation

* Excellent Thermal Stability

* Facilitates Manual Gain Control, ALC and Modulation Techniques

* 225°C Capable Plastic Package

* RoHS Compliant M