MRF6V2010NBR1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistor

MRF6V2010NBR1, RF Power Field Effect Transistor

95 Ω, 100 MHz Long Ferrite Beads 1000 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitor 22 μF, 35 V Tantalum Capacitor 39 K pF Chip Capacitors 22 K pF Chip Capacitors 0.1 μF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 12 pF Chip Capacitor 470 μF, 63 V Elect

Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev.

1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz.

Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain 23.9 dB Drain Efficie

MRF6V2010NBR1 Features

* Integrated ESD Protection

* Excellent Thermal Stability

* Facilitates Manual Gain Control, ALC and Modulation Techniques

* 200°C Capable Plastic Package

* RoHS Compliant

* TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.