MRF6V10250HSR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistor

MRF6V10250HSR3, RF Power Field Effect Transistor

240 pF Chip Capacitor 1.8 pF Chip Capacitors 3.3 pF Chip Capacitor 5.1 pF Chip Capacitors 39 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 4.7 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitors 5 nH, 2 Turn Inductor 7 nH, Hand Wound 10 Ω, 1/4 W Chip Resistor 20 Ω, 1 W Chip Resistor Part Number

Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev.

0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle.

This device is suitable for use in pulsed applications.

Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA, Pout = 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 10% Power Gain <

MRF6V10250HSR3 Features

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* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for I