MRF6V14300HR3 Datasheet (Motorola) - RF Power Field Effect Transistors

MRF6V14300HR3, RF Power Field Effect Transistors

43 pF Chip Capacitor 18 pF Chip Capacitor 33 pF Chip Capacitor 27 pF Chip Capacitor 2.2 μF, 100 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 330 pF, 63 V Electrolytic Capacitor 0.1 μF, 35 V Chip Capacitor 10 μF, 35 V Tantalum Capacitor 10 Ω, 1/4 W Chip Resistor Part Number ATC100B430JT500XT

Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev.

2, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle.

These devices are suitable for use in pulsed applications.

Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycl

MRF6V14300HR3 Features

* MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFETs Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate