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RD30HUF1 Silicon MOSFET

RD30HUF1 Description

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 DRAWING 22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1 Silico.
RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. High power gain: Po.

RD30HUF1 Applications

* 7.2+/-0.5 OUTLINE
* High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz

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