XP1009 - GaAs MMIC Power Amplifier

Mimix Broadband

XP1009 Datasheet Preview — Preview of XP1009 PDF

Datasheet Details

Part number	XP1009
Manufacturer	Mimix Broadband
File Size	171.39 KB
Description	GaAs MMIC Power Amplifier
Datasheet	XP1009_MimixBroadband.pdf

XP1009 Product details

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.5 VDC 330,660 mA +0.3 VDC +12 dBm -65 to +165 OC -55 to MTTF TAble3 MTTF Table 3 (3) Channel temperature affects a device's MTTF.It is recommended to keep channel temperature as low as possible for maximum life.Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input R

Features

Excellent Linear Output Amplifier Stage 20.0 dB Small Signal Gain +29.5 dBm P1dB Compression Point +38.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam litho.

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Published: May 25, 2007 |