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ICE60N150 N-Channel MOSFET

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Description

ICE60N150 N-Channel Enhancement Mode MOSFET .
G TO-220 Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Av.

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Datasheet Specifications

Part number
ICE60N150
Manufacturer
Micross Components
File Size
716.79 KB
Datasheet
ICE60N150-MicrossComponentspdf
Description
N-Channel MOSFET

Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P

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