ICE60N150 - N-Channel MOSFET

Micross Components

ICE60N150 Datasheet Preview — Preview of ICE60N150 PDF

Datasheet Details

Part number	ICE60N150
Manufacturer	Micross Components
File Size	716.79 KB
Description	N-Channel MOSFET
Datasheet	ICE60N150-MicrossComponentspdf

ICE60N150 Product details

Description

G TO-220 Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 25 75 690 6 50 ±20 ±30 208 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 6A Limited by Tjmax VDS = 480V, ID = 25A, Tj = 125°C Static AC (

Features

r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 25A 650V 0.13Ω 85nC Pin.

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Published: Sep 24, 2016 |