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ICE10N65 Datasheet - Micross Components

ICE10N65, N-Channel Enhancement Mode MOSFET

ICE10N65 N-Channel Enhancement Mode MOSFET .
TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current A.
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ICE10N65-MicrossComponents.pdf

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Datasheet Details

Part number:

ICE10N65

Manufacturer:

Micross Components

File Size:

718.64 KB

Description:

N-Channel Enhancement Mode MOSFET

Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P

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