ICE11N65FP - N-Channel MOSFET

Micross Components

ICE11N65FP Datasheet Preview — Preview of ICE11N65FP PDF

Datasheet Details

Part number	ICE11N65FP
Manufacturer	Micross Components
File Size	704.13 KB
Description	N-Channel MOSFET
Datasheet	ICE11N65FP-MicrossComponentspdf

ICE11N65FP Product details

Description

TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 11 35 460 7.5 50 ±20 ±30 35 -55 to +150 50 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 7.5A Limited by Tjmax VDS = 480V, ID = 11A, Tj = 125°C Static

Features

r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 11A 650V 0.25Ω 59nC Pin.

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Published: Sep 24, 2016 |