ICE13N65 Datasheet - Icemos

ICE13N65, N-Channel Enhancement Mode MOSFET

ICE13N65 ICE13N65 N-Channel Enhancement Mode MOSFET ID V(BR)DSS Product Summary TA=25oC 13A ID=250uA 650V Max Min .

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Datasheet Details

Part number:

ICE13N65

Manufacturer:

Icemos

File Size:

381.73 KB

Description:

N-Channel Enhancement Mode MOSFET

Features

* Low rDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
* Increased transconductance performance
* Optimized design for high performance power systems H

Applications

* in process in the USA and the above listed countries. SP-13N65-000-6 06/06/2014 9 ICE13N65 Marking Information YY = Last two digits of the year WW = Work week calendar on Icemos subcon assembly & test house
* = Initial for Icemos subcon assembly and test house YYWW
* XXXXXX ICE13N65

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ICE13N65 N-Channel Enhancement Mode MOSFET Icemos

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