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MT4C4M4E9 - 4 MEG x 4 EDO DRAM

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Micron Technology

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MT4C4M4E9 4 MEG x 4 EDO DRAM by Micron Technology - Datasheet Preview — Datasheet preview – MT4C4M4E9

Datasheet Details

Part number	MT4C4M4E9
Manufacturer	Micron Technology
File Size	291.14 KB
Description	4 MEG x 4 EDO DRAM
Datasheet	MT4C4M4E9 Datasheet
Note	This datasheet PDF includes multiple part numbers: MT4C4M4E9, MT4LC4M4E9. Please refer to the document for exact specifications by model.
Additional preview pages of the MT4C4M4E9 datasheet.

Product details

Description

The 4 Meg x 4 DRAM is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. Rev.

Features

Industry-standard x4 pinout, timing, functions and packages.
State-of-the-art, high-performance, low-power CMOS silicon-gate process.
Single power supply (+3.3V ±0.3V or +5V ±10%).
All inputs, outputs and clocks are TTL-compatible.
Refresh modes: RAS#-ONLY, HIDDEN and CAS#BEFORE-RAS# (CBR).
Optional Self Refresh (S) for low-power data retention.
11 row, 11 column addresses (2K refresh) or 12 row, 10 column addresses (4K refresh).

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Published: Jan 16, 2006 |