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MT4C4M4A1 - DRAM

Product Overview

Micron Technology

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MT4C4M4A1 DRAM by Micron Technology - Datasheet Preview — Datasheet preview – MT4C4M4A1

Datasheet Details

Part number	MT4C4M4A1
Manufacturer	Micron Technology
File Size	360.24 KB
Description	DRAM
Datasheet	MT4C4M4A1 Datasheet
Note	This datasheet PDF includes multiple part numbers: MT4C4M4A1, MT4LC4M4B1. Please refer to the document for exact specifications by model.
Additional preview pages of the MT4C4M4A1 datasheet.

Product details

Description

The 4 Meg x 4 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x4 configuration.

Features

Industry-standard x4 pinout, timing, functions, and packages.
High-performance, low-power CMOS silicon-gate process.
Single power supply (+3.3V ±0.3V or +5V ±0.5V).
All inputs, outputs and clocks are TTL-compatible.
Refresh modes: RAS#-ONLY, HIDDEN and CAS#BEFORE-RAS# (CBR).
Optional self refresh (S) for low-power data retention.
11 row, 11 column addresses (2K refresh) or 12 row, 10 column addresses (4K refresh).
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Other Datasheets by Micron Technology

MT4C4M4Ax - DRAM
MT4C4M4B1 - DRAM
MT4C4M4Bx - DRAM
MT4C4M4E8 - 4 MEG x 4 EDO DRAM
MT4C4M4E9 - 4 MEG x 4 EDO DRAM
MT4C4M4Ex - DRAM

Published: Jan 16, 2006 |