MT4C4M4Ex - DRAM

Product Overview

Micron Technology

Part number	MT4C4M4Ex
Manufacturer	Micron Technology
File Size	291.14 KB
Description	DRAM
Datasheet	MT4C4M4Ex Datasheet
Additional preview pages of the MT4C4M4Ex datasheet.

The 4 Meg x 4 DRAM is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. Rev.

Industry-standard x4 pinout, timing, functions and packages.
State-of-the-art, high-performance, low-power CMOS silicon-gate process.
Single power supply (+3.3V ±0.3V or +5V ±10%).
All inputs, outputs and clocks are TTL-compatible.
Refresh modes: RAS#-ONLY, HIDDEN and CAS#BEFORE-RAS# (CBR).
Optional Self Refresh (S) for low-power data retention.
11 row, 11 column addresses (2K refresh) or 12 row, 10 column addresses (4K refresh).

📁 Similar Datasheet

Other Datasheets by Micron Technology

Published: Aug 31, 2005 |