Datasheet4U Logo Datasheet4U.com

MT4C4001J - 1 MEG x 4 DRAM

Key Features

  • Industry standard x4 pinout, timing, functions, and packages.
  • High-performance, CMOS silicon-gate process.
  • Single +5V±10% power supply.
  • Low-power, 2.5mW standby; 300mW active, typical.
  • All inputs, outputs, and clocks are fully TTL and CMOS compatible.
  • 1,024-cycle refresh distributed across 16ms.
  • Refresh modes: RAS-ONLY, CAS-BEFORE-RAS (CBR), and HIDDEN.
  • FAST PAGE MODE access cycle.
  • CBR with WE a HIGH (JEDEC test mo.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MT4C4001J 1 MEG x 4 DRAM Fast Page Mode DRAM Austin Semiconductor
MT4C4001 standard or self refresh Micron Technology
MT4C40004 4M x 4 DRAM Micron Technology
MT4C40005 4M x 4 DRAM Micron Technology
MT4C4003J 1M x 4 DRAM Micron Technology

Other Datasheets by Micross

Part Number Description
MT42C4256 256K x 4 VRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DRAM MT4C4001J 1 MEG x 4 DRAM Fast Page Mode DRAM AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions, and packages • High-performance, CMOS silicon-gate process • Single +5V±10% power supply • Low-power, 2.