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MT46H8M16LF - Mobile Low-Power DDR SDRAM

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Micron Technology

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MT46H8M16LF Mobile Low-Power DDR SDRAM by Micron Technology - Datasheet Preview — Datasheet preview – MT46H8M16LF

Datasheet Details

Part number	MT46H8M16LF
Manufacturer	Micron Technology
File Size	3.12 MB
Description	Mobile Low-Power DDR SDRAM
Datasheet	MT46H8M16LF Datasheet
Additional preview pages of the MT46H8M16LF datasheet.

Product details

Description

of products still under development. Original Document, Advance

Features

VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V.
Bidirectional data strobe per byte of data (DQS).
Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
Differential clock inputs (CK and CK#).
Commands entered on each positive CK edge.
DQS edge-aligned with data for READs; centeraligned with data for WRITEs.
Four internal banks for concurrent operation.
Data masks (DM) for masking write data.

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Published: Oct 19, 2006 |