MT46H8M16LF Datasheet (Micron Technology) - Mobile Low-Power DDR SDRAM

MT46H8M16LF, Mobile Low-Power DDR SDRAM

of products still under development.

PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H8M16.fm - Rev.

A 03/05 EN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice.

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MT46H8M16LF Features

* VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V

* Bidirectional data strobe per byte of data (DQS)

* Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle

* Differential clock inputs (CK and CK#)

* Commands entered on each positive