MT4606 Datasheet (MT Semiconductor) - N+P-Channel Enhancement Mode Field Effect Transistor

MT4606, N+P-Channel Enhancement Mode Field Effect Transistor

These dual N- and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

These devices are well suited for lo

MT4606 Features

* Q1: N-Channel 7A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V

* Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V

* Fast switching speed

* High power and handling capability in a widely used surface mou