Description
The MDS1527 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 30V
ID = 13.1A @VGS = 10V
RDS(ON)
< 15.9mΩ @VGS = 10V
< 23.7mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
5(D) 6(D) 7(D) 8(D)
4(G)
3(S) 2(S) 1(S)
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=70oC TA=25oC TA=70oC
TC=25oC TC=70oC TA=25oC TA=70oC
Thermal Characterist.
MDS1527-MagnaChip.pdf
