Description
The MDS1101 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 12V ID = 15A @VGS = 4.5V RDS(ON)
< 8.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
5(D) 6(D) 7(D) 8(D)
4(G)
3(S) 2(S) 1(S)
G
8 Leads, SOIC
D S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range
TA=25oC TA=70oC
TA=25oC TA=70oC
Thermal Characteristics
Characteristics Thermal Resistance,.
MDS1101-MagnaChip.pdf
