Description
The CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9 GHz WiMAX and BWA amplifier applications.
Features
- VHF - 3.0 GHz Operation.
- 30 W Peak Power Capability.
- 15 dB Small Signal Gain.
- 4.0 W PAVE at < 2.0 % EVM.
- 28% Drain Efficiency at 4 W Average Power.
- WiMAX Fixed Access 802.16-2004 OFDM.
- WiMAX Mobile Access 802.16e OFDMA
Large Signal Models Available for ADS and MWO
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CGH27030-MACOM.pdf
