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MA4SW110 - Silicon PIN Diode Switches

Download the MA4SW110 datasheet PDF. This datasheet also covers the MA4SW110-MA variant, as both devices belong to the same silicon pin diode switches family and are provided as variant models within a single manufacturer datasheet.

Description

The MA4SW110 (SPST), MA4SW210 (SPDT) and MA4SW310 (SP3T) are series-shunt, broadband, PIN diode switches made with MACOM’s HMICTM (Heterolithic Microwave Integrated Circuit) process.

Features

  • Broad Bandwidth.
  • Specified from 50 MHz to 20 GHz.
  • Usable from 50 MHz to 26.5 GHz.
  • Lower Insertion Loss / Higher Isolation.
  • Fully Monolithic, Glass Encapsulated Chip.
  • Up to +33 dBm CW Power Handling @ +25°C.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4SW110-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MA4SW110 Monolithic PIN Diode Switches Tyco
MA4SW101 Surface Mount Monolithic PIN Diode Switches Tyco Electronics
MA4SW201 Surface Mount Monolithic PIN Diode Switches Tyco Electronics
MA4SW210 SPDT Silicon PIN Diode Switch MACOM
MA4SW210 Monolithic PIN Diode Switches Tyco

Other Datasheets by MACOM Technology Solutions

Part Number Description
MA4SW310 Silicon PIN Diode Switches
MA4SW410B-1 Silicon SP4T PIN Diode Switch
MA4SPS402 PIN Diode
MA4SPS502 PIN Diode
MA40016 Ceramic Packaged Silicon Schottky Mixer Diodes

Full PDF Text Transcription

Click to expand full text
MA4SWx10 Series HMIC™ Silicon PIN Diode Switches Features  Broad Bandwidth  Specified from 50 MHz to 20 GHz  Usable from 50 MHz to 26.5 GHz  Lower Insertion Loss / Higher Isolation  Fully Monolithic, Glass Encapsulated Chip  Up to +33 dBm CW Power Handling @ +25°C  RoHS* Compliant Description The MA4SW110 (SPST), MA4SW210 (SPDT) and MA4SW310 (SP3T) are series-shunt, broadband, PIN diode switches made with MACOM’s HMICTM (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low dispersion glass. By also incorporating small spacing between circuit elements, the result is an HMIC chip with low insertion loss and high isolation at frequencies up to 26.5 GHz.
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