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MA4SW410B-1 - Silicon SP4T PIN Diode Switch

Download the MA4SW410B-1 datasheet PDF. This datasheet also covers the MA4SW410B-1-MA variant, as both devices belong to the same silicon sp4t pin diode switch family and are provided as variant models within a single manufacturer datasheet.

General Description

The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing MACOM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310.

Key Features

  • Broad Bandwidth Specified up to 18 GHz.
  • Usable up to 26 GHz.
  • Integrated Bias Network.
  • Low Insertion Loss / High Isolation.
  • Fully Monolithic, Glass Encapsulated Chip.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4SW410B-1-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MA4SW410B-1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MA4SW410B-1. For precise diagrams, and layout, please refer to the original PDF.

MA4SW410B-1 HMIC™ Silicon SP4T PIN Diode Switch with Integrated Bias Network Features  Broad Bandwidth Specified up to 18 GHz  Usable up to 26 GHz  Integrated Bias Net...

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dth Specified up to 18 GHz  Usable up to 26 GHz  Integrated Bias Network  Low Insertion Loss / High Isolation  Fully Monolithic, Glass Encapsulated Chip  RoHS* Compliant Description The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing MACOM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass.