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LSG11N65E - N-channel 650V Power MOSFET

Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

  • Ultra low RDS(on).
  • Ultra low gate charge (typ. Qg = 34nC).
  • High body diode ruggedness.
  • Easy to use.
  • 100% UIS tested.
  • RoHS compliant TO-251 TO-252,TO-263 TO-220 TO-220MF TO-247 TO-262.

📥 Download Datasheet

Datasheet Details

Part number LSG11N65E
Manufacturer Lonten
File Size 1.29 MB
Description N-channel 650V Power MOSFET
Datasheet download datasheet LSG11N65E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LSB11N65E/LSC11N65E/LSD11N65E/ LSE11N65E/LSG11N65E/ LSH11N65E/LSF11N65E LonFET Lonten N-channel 650V, 11A, 0.40Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.40Ω IDM 30A Qg,typ 34nC Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 34nC)  High body diode ruggedness  Easy to use  100% UIS tested  RoHS compliant TO-251 TO-252,TO-263 TO-220 TO-220MF TO-247 TO-262 Applications D  PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g.
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