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KIA16N50H - N-CHANNEL MOSFET

General Description

This power MOSFET is produced using KIA advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • n RDS(on)=0.32Ω @ VGS=10V n Low gate charge ( typical 45nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 6 Function Gate Drain Source Rev 1.3 SEP 2014 KIA.

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Datasheet Details

Part number KIA16N50H
Manufacturer KIA
File Size 317.05 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet KIA16N50H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KIA SEMICONDUCTORS 16A，500V N-CHANNEL MOSFET 16N50H 1.Description This power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 2. Features n RDS(on)=0.32Ω @ VGS=10V n Low gate charge ( typical 45nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 6 Function Gate Drain Source Rev 1.3 SEP 2014 KIA SEMICONDUCTORS 16A，500V N-CHANNEL MOSFET 4.