KIA2N60H
Description
The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
2. Features
- RDS(ON)=4.1Ω@VGS=10V.
- Low gate charge (typical 9n C)
- High ruggedness
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability
3. Pin configuration
Pin 1 2 3 4
1 of 6
Function Gate Drain
Source Drain
Rev 1.1 JAN 2014
SEMICONDUCTORS
2.0A, 600V N-CHANNEL MOSFET
2N60H
4. Absolute maximum ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current continuous TC=25ºC TC=100ºC
Drain current pulsed (note1)
Avalanche Enlsed
Repetitive (note1) Single pulse (note2)
Peak diode recovery dv/dt (note3)
VDSS VGSS
IDP EAR EAS dv/dt
Total power dissipation
TC=25ºC Derate above 25ºC
Junction temperature
Storage temperature
TSTG
- Drain current limited by maximum...
