KIA28N50H
Description
28N50H
This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
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2. Features
- RDS(on)=0.17Ω @ VGS=10V
- Low gate charge ( typical 102n C)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability
3. Pin configuration
Pin 1 2 3
1 of 5
Function Gate Drain
Source
Rev 1.0 JAN 2014
SEMICONDUCTORS
28A，500V N-CHANNEL MOSFET
28N50H
4. Absolute maximum ratings
Parameter
(TC= 25 ºC , unless otherwise specified)
Symbol
Ratings
Units
Drain-source voltage Gate-source voltage
VDSS VGSS
500 +30
Drain current continuous
TC=25ºC TC=100ºC
Drain current pulsed (note1)
Avalanche...
