KIA13N50H
Description
The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology
2. Features
- RDS(on)=0.48Ω @ VGS=10V
- Low gate charge ( typical 43n C)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability
3. Pin configuration
Pin 1 2 3 4
1 of 5
Function Gate Drain Source Drain
SEMICONDUCTORS
13Amps，500V N-CHANNEL MOSFET
13N50H
4. Absolute maximum ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current continuous Drain current pulsed (note1)
TC=25ºC TC=100ºC
Avalanche energy
Repetitive (note1) Single pulse (note2)
Peak diode recovery dv/dt (note 3)
VDSS VGSS
IDP EAR EAS dv/dt
Total power dissipation
TC=25ºC derate above 25ºC
Junction temperature
Storage temperature
TSTG
Drain current...
