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KMB035N40DB - N-Channel Trench MOSFET

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for Back-light Inverter and Power Supply.

Features

  • VDSS=40V, ID=35A. Low Drain to Source On-state Resistance. : RDS(ON)=12.0m (Max. ) @ VGS=10V : RDS(ON)=17.0m (Max. ) @ VGS=4.5V A CD B H G FF J E 123 O K L N M DIM.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KMB035N40DB N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=35A. Low Drain to Source On-state Resistance. : RDS(ON)=12.0m (Max.) @ VGS=10V : RDS(ON)=17.0m (Max.) @ VGS=4.5V A CD B H G FF J E 123 O K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O Max 0.
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