KMB050N60P
Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology and switching mode power supplies.
FEATURES
VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=0.022 @VGS = 10V Qg(typ.) = 32n C Improved dv/dt capacity, high Ruggedness Maximum Junction Temperature Range (175
)
N CHANNEL MOS FIELD EFFECT TRANSISTOR
1. GATE 2. DRAIN 3. SOURCE
DIM A B C D E F G H I J K L M N O P Q
MILLIMETERS 9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05 0.8+_ 0.1 3.6 +_ 0.2 2.8+_ 0.1 3.7
0.5+0.1/-0.05 1.5
13.08+_ 0.3
1.46 1.4 +_ 0.1 1.27+_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0.2
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed...
