KMB010P30QA
DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack.
FEATURES
VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=28m (Max.) @ VGS=-4.5V Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain Source Voltage Gate Source Voltage
Drain Current
VDSS
-30
VGSS
20 V
DC ID- -10 A
Pulsed
-80
Drain Source Diode Forward Current
IS -1.7 A
Drain Power Dissipation
PD- 2.0 W
Maximum Junction Temperature Storage Temperature Range
Tj 150 Tstg -55~150
Thermal Resistance, Junction to Ambient Note :
- Surface Mounted on FR4 Board
Rth JA-
/W
PIN CONNECTION (TOP VIEW)
S1 S2 S3 G4
8D 7D 6D 5D
1 2 3
8 7 6
P-Ch Trench MOSFET
DIM MILLIMETERS
A 4.85+_...
