IRLR3114ZPbF Power MOSFET

International Rectifier

IRLR3114ZPbF Description

.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

IRLR3114ZPbF Applications

* PD - 97284A IRLR3114ZPbF IRLU3114ZPbF HEXFET® Power MOSFET D VDSS = 40V G RDS(on) = 4.9mΩ S D-Pak I-Pak IRLR3114ZPbF IRLU3114ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (S

📥 Download Datasheet

IRLR3114ZPbF Datasheet Preview — Preview of IRLR3114ZPbF PDF

Datasheet Details

Part number: IRLR3114ZPbF
Manufacturer: International Rectifier
File Size: 315.42 KB
Datasheet: IRLR3114ZPbF-InternationalRectifier.pdf
Description: Power MOSFET

📁 Related Datasheet

IRLR3114Z - N-Channel MOSFET (INCHANGE)
IRLR3110Z - N-Channel MOSFET (INCHANGE)
IRLR3410 - N-Channel MOSFET (INCHANGE)
IRLR3410PbF - Power MOSFET (Infineon)
IRLR3410TRPBF - N-Channel MOSFET (VBsemi)
IRLR3636 - N-Channel MOSFET (INCHANGE)
IRLR3705Z - N-Channel MOSFET (INCHANGE)
IRLR3715Z - N-Channel MOSFET (INCHANGE)

📌 All Tags

Power MOSFET International Rectifier

International Rectifier IRLR3114ZPbF-like datasheet

IRLR3110ZPBF - Power MOSFET
IRLR3103 - Power MOSFET
IRLR3103PbF - Power MOSFET
IRLR3105 - HEXFET Power MOSFET
IRLR3105PBF - HEXFET Power MOSFET
IRLR3303 - Power MOSFET