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IRLR3114Z N-Channel MOSFET

IRLR3114Z Description

isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114Z *.

IRLR3114Z Features

* Static drain-source on-resistance: RDS(on)≤4.9mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

IRLR3114Z Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IRLR3114Z
Manufacturer
INCHANGE
File Size
237.75 KB
Datasheet
IRLR3114Z-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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