Datasheet4U Logo Datasheet4U.com

IRLR3410PbF Power MOSFET

IRLR3410PbF Description

IRLR3410PbF IRLU3410PbF .
Fifth Generation HEXFET® Power MOSFET utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

IRLR3410PbF Features

* Logic Level Gate Drive
* Ultra Low On-Resistance
* Surface Mount (IRLR3410)
* Straight Lead (IRLU3410)
* Advances Process Technology
* Fast Switching
* Fully Avalanche Rated

IRLR3410PbF Applications

* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. HEXFET® Power MOSFET

📥 Download Datasheet

Preview of IRLR3410PbF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRLR3410PBF - Power MOSFET (International Rectifier)
  • IRLR3410 - HEXFET Power MOSFET (International Rectifier)
  • IRLR3410TRPBF - N-Channel MOSFET (VBsemi)
  • IRLR3103 - Power MOSFET (International Rectifier)
  • IRLR3103PbF - Power MOSFET (International Rectifier)
  • IRLR3105 - HEXFET Power MOSFET (International Rectifier)
  • IRLR3105PBF - HEXFET Power MOSFET (International Rectifier)
  • IRLR3110Z - N-Channel MOSFET (INCHANGE)

📌 All Tags

Power MOSFET Infineon
Infineon IRLR3410PbF-like datasheet