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IRLR2705, IRLR2705PbF Power MOSFET

IRLR2705 Description

IRLR2705PbF .
Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

IRLR2705 Features

* Logic-Level Gate Drive
* Ultra Low On-Resistance
* Advanced Process Technology
* Fast Switching
* Fully Avalanche Rated

IRLR2705 Applications

* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.040 28A
* D G Gate S G D- Pak IRLR2705PbF D Drain

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRLR2705, IRLR2705PbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRLR2705, IRLR2705PbF
Manufacturer
Infineon ↗
File Size
1.26 MB
Datasheet
IRLR2705PbF-Infineon.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRLR2705, IRLR2705PbF.
Please refer to the document for exact specifications by model.

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