Description
IRLR2705PbF .
Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Features
* Logic-Level Gate Drive
* Ultra Low On-Resistance
* Advanced Process Technology
* Fast Switching
* Fully Avalanche Rated
Applications
* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. HEXFET® Power MOSFET
VDSS RDS(on)
ID
55V 0.040 28A
* D
G Gate
S G
D- Pak IRLR2705PbF
D Drain