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IRLR3410TRPBF N-Channel MOSFET

IRLR3410TRPBF Description

IRLR3410TRPBF IRLR3410TRPBF Datasheet www.VBsemi.com N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID.

IRLR3410TRPBF Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

IRLR3410TRPBF Applications

* Primary Side Switch GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous S

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Datasheet Details

Part number
IRLR3410TRPBF
Manufacturer
VBsemi
File Size
513.56 KB
Datasheet
IRLR3410TRPBF-VBsemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET VBsemi
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