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IRL3803VSPBF Power MOSFET

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Description

l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175°C Operating Temper.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per sili.

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Features

* . U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www. irf. com
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL3803VS/IRL3803VLPbF D2Pak Package Outline

Applications

* PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 5.5mΩ ID = 140A‡ S The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mou

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