Description
l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175°C Operating Temper.
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per sili.
Features
* . U. T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied Voltage
Body Diode Inductor Curent
Forward Drop
Ripple ≤ 5%
[VDD] [ISD]
www. irf. com
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs
7
IRL3803VS/IRL3803VLPbF
D2Pak Package Outline
Applications
* PD - 95449
IRL3803VSPbF IRL3803VLPbF
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 5.5mΩ
ID = 140A
S
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mou