Description
www.DataSheet4U.com PD - 94735 HEXFET® Power MOSFET l l l l l l l IRL3803VS IRL3803VL VDSS = 30V Logic-Level Gate Drive Advanced Process Technolog.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon a.
Features
* -Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
[ISD ]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs
www. irf. com
7
IRL3803VS/IRL3803VL
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak
Applications
* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection
