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IRL3803VL Power MOSFET

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Description

www.DataSheet4U.com PD - 94735 HEXFET® Power MOSFET l l l l l l l IRL3803VS IRL3803VL VDSS = 30V Logic-Level Gate Drive Advanced Process Technolog.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon a.

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Features

* -Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ISD ]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRL3803VS/IRL3803VL D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak

Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection

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