IRGS4B60KPBF, IRGB4B60KPBF Datasheet - International Rectifier

IRGS4B60KPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGS4B60KPBF Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES

IRGB4B60KPBF-InternationalRectifier.pdf

IRGS4B60KPBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGS4B60KPBF, IRGB4B60KPBF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRGS4B60KPBF, IRGB4B60KPBF

Manufacturer:

International Rectifier

File Size:

387.58 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRGS4B60KPBF, IRGB4B60KPBF.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRGS4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS4B60KD1PBF Insulated Gate Bipolar Transistor (International Rectifier)

IRGS4045DPBF Insulated Gate Bipolar Transistor (International Rectifier)

IRGS4055PBF PDP Trench IGBT (International Rectifier)

IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS4062DPBF Power MOSFET (International Rectifier)

IRGS4064DPBF Power MOSFET (International Rectifier)

IRGS4065PBF IGBT (International Rectifier)

TAGS

IRGS4B60KPBF IRGB4B60KPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

IRGS4B60KPBF Distributor