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IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR

IRGS4056DPbF Description

PD - 96197 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGS4056DPbF Features

* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 µS short circuit SOA
* Square RBSOA
* 100% of the parts tested for 4X rated current (ILM)
* Positive VCE (ON) Temperature co-efficient

IRGS4056DPbF Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI IRGS4056DPbF VCES = 600V IC = 12A, TC = 100°C tSC ≥

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