IRGS4045DPBF Insulated Gate Bipolar Transistor

International Rectifier

Description

IRGS4045DPbF VCES = 600V IC  6.0A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC tsc > 5µs, Tjmax = 175°C VCE.

📥 Download Datasheet

IRGS4045DPBF Datasheet Preview — Preview of IRGS4045DPBF PDF

Datasheet Specifications

Part number: IRGS4045DPBF
Manufacturer: International Rectifier
File Size: 327.13 KB
Datasheet: IRGS4045DPBF-InternationalRectifier.pdf
Description: Insulated Gate Bipolar Transistor

Features

* vs. VGE ICE = 6.0A, L=600μH October 10, 2012 Thermal Response ( Z thJC ) IRGS4045DPbF 10 1 D = 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) J J 1 1 R1R1 R2R2 2 2 R3R3 3 3 R4R4 C Ri (°C/W) 0.0301 0.7200 i (sec) 0.000004 0.000067 44 0.7005 0.000

Applications

* Appliance Motor Drive
* Inverters
* SMPS G Gate C Colletor E Emitter Fe a ture s Low VCE(ON) and switching losses  Benefits High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to

IRGS4045DPBF Distributors

📁 Related Datasheet

IRGS4620DPbF IRGS4630DPbF IRGS4640DPbF IRGSL4640DPbF IRG4BC20F IRG4BC20FD

📌 All Tags

IRGS4045DPBF Insulated Gate Bipolar Transistor International Rectifier

International Rectifier IRGS4045DPBF-like datasheet