Datasheet4U Logo Datasheet4U.com

IRGS4B60KD1PBF Insulated Gate Bipolar Transistor

📥 Download Datasheet Datasheet Preview Page 1

Description

PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY DIODE .

📥 Download Datasheet

Preview of IRGS4B60KD1PBF PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* C VCES = 600V
* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature rated at 175°C.
* Lead-Free G E n-channel IC = 7.6A, TC=100

IRGS4B60KD1PBF Distributors

📁 Related Datasheet

IRGS4620DPbF IRGS4630DPbF IRGS4640DPbF IRGSL4640DPbF IRG4BC20F IRG4BC20FD

📌 All Tags

IRGS4B60KD1PBF Insulated Gate Bipolar Transistor International Rectifier
International Rectifier IRGS4B60KD1PBF-like datasheet
IRGS4B60KD1
IRGS4B60KPBF
IRGS4045DPBF
IRGS4055PBF
IRGS4056DPbF