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IRGS4630DPBF Insulated Gate Bipolar Transistor

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Description

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.

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Datasheet Specifications

Part number
IRGS4630DPBF
Manufacturer
International Rectifier
File Size
1.20 MB
Datasheet
IRGS4630DPBF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor

Applications

* Appliance Drives
* Inverters

IRGS4630DPBF Distributors

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📌 All Tags

IRGS4630DPBF Insulated Gate Bipolar Transistor International Rectifier
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