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IRGS4607DPBF Insulated Gate Bipolar Transistor

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Description

  VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ.= 1.75V @ IC = 4.0A IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate.

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Datasheet Specifications

Part number
IRGS4607DPBF
Manufacturer
International Rectifier
File Size
821.57 KB
Datasheet
IRGS4607DPBF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor

Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

IRGS4607DPBF Distributors

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